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20M22X 74LVCH 24100 SG8020 856243 AB1548B 00146 X9420WVI
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  Datasheet File OCR Text:
 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
3DD200
DESCRIPTION With TO-3 package High collector-base breakdown voltage : VCBO=250V APPLICATIONS For TV horizontal output applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=ae )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg

PARAMETER
Collector-base voltage
INC
Collector-emitter voltage
Emitter-base voltage
E SEM ANG H
Open base TC=75ae
Open emitter
OND IC
CONDITIONS
TOR UC
VALUE 250 100 6 3 30 150 -55~150
UNIT V V V A W ae ae
Open collector
Collector current Collector power dissipation Junction temperature Storage temperature
THERMAL CHARACTERISTICS
SYMBOL R|E jc CHARACTERISTICS Thermal resistance junction to case MAX 1.5 UNIT ae /W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=50mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=3A; IB=0.3A IC=3A; IB=0.3A VCB=250V; IE=0 VEB=6V; IC=0 IC=2A ; VCE=5V 30 MIN 100 250 6 TYP.
3DD200
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE tf
MAX
UNIT V V V
1.5 1.5 0.5 0.1
V V mA mA
Fall time

CHA IN
E SEM NG
IC=3A; IB1=0.2A; IB2=-0.3A
OND IC
TOR UC
120 1 |I
s
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
3DD200

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 outline dimensions (unindicated tolerance:A
0.1mm)
3


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